Gallium Nitride Device Market Research Report, and Overview, 2025–2027
The global gallium nitride device market was valued at USD 20.56 billion in 2019 and is projected to grow from USD 21.18 billion in 2020 to USD 39.74 billion by 2032
The global gallium nitride device market was valued at USD 20.56 billion in 2019 and is projected to grow from USD 21.18 billion in 2020 to USD 39.74 billion by 2032, exhibiting a compound annual growth rate (CAGR) of 5.20% during the forecast period from 2020 to 2032. In 2019, North America led the market, accounting for a significant 35.89% share, driven by strong adoption of GaN technologies in high-frequency, power, and RF applications.
The global gallium nitride (GaN) device market has experienced steady growth in recent years, driven by increasing demand for high-efficiency, high-performance semiconductor solutions across various applications such as power electronics, RF components, and optoelectronics. The market was valued at USD 20.56 billion in 2019 and is projected to reach USD 39.74 billion by 2032, growing at a compound annual growth rate (CAGR) of 5.20% over the forecast period. North America accounted for the largest market share in 2019, supported by robust investments in advanced technologies and strong presence of key industry players.
Information Source:
https://www.fortunebusinessinsights.com/gallium-nitride-gan-devices-market-103367
A list of all the prominent Gallium Nitride Device Market Key Players:
Infineon Technologies AG (Germany)
Efficient Power Conversion Corporation. (The U.S.)
EPISTAR Corporation (Taiwan)
GaN Systems (Canada)
MACOM (The U.S.)
Microsemi (The U.S.)
Mitsubishi Electric Corporation (Japan)
NICHIA CORPORATION (Japan)
Northrop Grumman Corporation (The U.S.)
NXP Semiconductors. (Netherland)
Qorvo, Inc (The U.S.)
Texas Instruments Incorporated. (The U.S.)
Toshiba Corporation (Japan)
Drivers & Restraints
Expansion of the Telecommunications Sector to Boost Growth
The increasing demand for energy-efficient gallium nitride (GaN) devices is being driven by the rapid expansion of the telecommunications sector. Many internet service providers are now prioritizing lower latency through optical fiber connections, along with enhancing connectivity and network capacity. Additionally, the growing adoption of GaN devices in 5G infrastructure is expected to further accelerate gallium nitride device market growth in the coming years. However, the high costs associated with the maintenance and development of gallium nitride devices may pose a challenge to this growth.
Segmentation- Gallium Nitride Device Market
Opto-semiconductor Device Segment to Grow Rapidly Backed by Increasing Usage in Lasers
Based on device type, the opto-semiconductor device segment procured the highest gallium nitride device market share in 2019. This growth is attributable to their increasing usage in various aerospace applications, such as Light Detection and Ranging (LiDAR) and pulsed lasers. Besides, they are used in optoelectronics, LEDs, lasers, photodiodes, and solar cells.
Regional Insights- Gallium Nitride Device Market
High Demand for Wireless Devices to Favor Growth in Europe
Geographically, North America generated USD 7.38 billion in 2019 because of the presence of numerous prominent manufacturers, such as MACOM, Cree, Inc., Northrop Grumman Corporation, Efficient Power Conversion Corporation, Microsemi, and others in this region.
Europe, on the other hand, is anticipated to grow significantly on account of the rising demand for wireless devices in Germany, France, and the U.K. In Asia Pacific, the rising demand for gallium nitride devices from emerging nations, such as India and China would aid growth.
Get A Free Sample PDF:
Key Industry Developments:
January 2025 - Wolfspeed launched its Gen 4 MOSFET technology platform, delivering breakthrough performance for high-power applications, enhancing efficiency and reliability in real-world conditions.
November 2024 - Infineon introduced the world's first 300mm power gallium nitride (GaN) wafer technology at electronica 2024, marking a significant advancement in power electronics manufacturing.